|CCL 20.02.05 Three Early Stage Reaserchers (ESR) positions, Maria Sklodowska-Curie Network, Glasgow, Zurich, or Copenhagen|
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Date: Wed Feb 5 13:13:55 2020
Subject: 20.02.05 Three Early Stage Reaserchers (ESR) positions, Maria Sklodowska-Curie Network, Glasgow, Zurich, or Copenhagen
Three Early Stage Reaserchers (ESR) positions, Maria Sklodowska-Curie Network, Glasgow, Zurich, or Copenhagen
Project Information: The Device Modelling Group at University of Glasgow (UK) in collaboration with IBM Research Zurich (IBM) in Switzerland and Synopsys QuantumATK (ATK) in Copenhagen is seeking to appoint three Early Stage Researchers (ESR) in the framework of the Marie Sklodowska-Curie European Industrial Doctorate Network on Defect Simulations and Material Growth of III-V Nanostructures European Industrial Doctorate.
Project overview: There is a great interest in integrating compound semiconductors either monolithically or heterogeneously on silicon to exploit their complementary properties. Particularly to exploit the direct bandgap of III-Vs for opto-electronic devices densely integrated with CMOS. In this project we will address the challenges associated with the formation of defects and material growth in compound semiconductors such as III-Vs as well as their impact on device performance. Defects may be exploited in the development of novel devices, but more often we wish to mitigate their deteriorating impact on electro-optic device performance, by growth and materials optimization.
ESR1 will mainly focus on aspects related to III-V materials epitaxial
growth on silicon, TEM analysis and development of a machine learning
algorithm for defect classification. Development of simulation framework
to model the electronic and optical properties of individual defects.
ESR2 will explore the role of defects in the context of opto-electronic
device performance, this will be done first via simulation where
optimized designs will be developed, and later these will be fabricated
by the ESR at IBM.
ESR3 will develop theoretical models which will describe the complexity
of the material growth process and defect formation in III-V materials.
Those models will be implemented in state-of-the-art QuantumATK
commercial simulation framework.
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